The control of the high-density microwave plasma for large-area electronics |
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| Affiliation: | 1. College of Science, National University of Defense Technology, 410073 Changsha, PR China;2. Institute of Physics, University of Rostock, 18051 Rostock, Germany;3. Graduate School, China Academy of Engineering Physics, Building 9, ZPark II, 100193 Beijing, PR China;1. Russian Federal Nuclear Center, All-Russian Research Institute of Technical Physics (RFNC-VNIITF), 13, Vasilyeva st., Snezhinsk, Chelyabinsk region 456770, Russia;2. National Research Nuclear University, Moscow Engineering Physics Institute (MEPhI), 31, Kashirskoe sh., Moscow 115409, Russia |
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| Abstract: | A uniform, low-temperature, and high-density microwave plasma (2.45 GHz) is produced without magnetic field, utilizing a spokewise antenna. The plasma maintains a uniform state in Ar low pressure of several 10 mTorr with high electron density, >1011 cm?3, and a temperature less than 2.5 eV within ±6% over 16 cm in diameter. Highly crystallized and photoconductive, hydrogenated microcrystalline silicon (μc-Si:H) film is produced from dichlorosilane (SiH2Cl2), H2 and Ar mixture at high deposition rate of more than 5 Å/s. This low-temperature and high-density microwave plasma source has a high potential not only for etching but for future large-area film deposition processes. |
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