Electronic properties of bottom gate silicon nitride/hydrogenated amorphous silicon structures |
| |
| Affiliation: | 1. Department of Electrical and Computer Engineering, Khalifa University of Science and Technology, Abu Dhabi 127788, United Arab Emirates;2. Department of Applied Mathematics and Sciences, Khalifa University of Science and Technology, Abu Dhabi 127788, United Arab Emirates;3. Centre for Biomedical Engineering, School of Electrical and Electronic Engineering, The University of Adelaide, SA 5000, Australia;1. Hanoi Irradiation Center, Vietnam Atomic Energy Institute, Hanoi, Viet Nam;2. Joint Institute for Nuclear Research, Dubna 141980, Russia;3. Institute of Physics, Maria Curie-Skłodowska University, Pl. Marii Curie-Skłodowskiej 1, 20-031 Lublin, Poland;4. Department of Organic and Physical Chemistry, Faculty of Chemical Technology and Engineering, West Pomeranian University of Technology Szczecin, Piastów Ave. 42, 71-065 Szczecin, Poland;5. Institute of Nuclear Physics, Polish Academy of Science, Krakow 31-342, Poland;6. Institute of Physics, Vietnam Academy of Science and Technology, 10 Dao Tan, Ba Dinh, Hanoi, Viet Nam;7. Graduate University for Science and Technology, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Cau Giay, Hanoi, Viet Nam;8. Institute of Research and Development, Duy Tan University, Danang 550000, Viet Nam |
| |
| Abstract: | The electronic properties of silicon nitride/hydrogenated amorphous silicon (SiN/a-Si:H) interfaces are studied with complementary techniques: quasistatic capacitance measurements achieved on c-Si/SiN/a-Si:H/Al MIS structures, and dark conductivity, steady-state photoconductivity and modulated photocurrent (MPC) experiments performed on glass/a-Si:H and glass/SiN/a-Si:H samples fitted with two coplanar Al electrodes, using the same SiN and aSi:H layers as in the MIS structures. Results of bias annealing experiments on the MIS structures are explained in the framework of the defect-pool model taking account of a fixed positive charge in the insulator, which should yield a slight electron accumulation in the a-Si:H close to the SiN/a-Si:H interface under zero bias equilibrium conditions. This electron accumulation is clearly put into evidence from the experiments carried out on the coplanar samples, where we observe that the conductivities in the dark and under illumination are much higher in presence of the bottom SiN layer. The SiN layer also induces a significant decrease of the density of states above the Fermi level determined from MPC, which also confirms the changes in the defect density stated by the capacitance measurements and in agreement with the defect-pool model predictions. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
