Coplanar amorphous silicon thin film transistor fabricated by inductively-coupled plasma CVD |
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| Affiliation: | 1. Warsaw University of Technology, IMiO PW, Koszykowa 75, 00-662 Warsaw, Poland;2. Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul, 130-701, South Korea;1. Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 136-791, Republic of Korea;2. Department of Material Science and Engineering, Yonsei University, Seoul 120-749, Republic of Korea;3. KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 136-701, Republic of Korea;4. Department of Mechanical Engineering, Virginia Tech, Blacksburg VA 24061, United states;5. Sensor System Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Republic of Korea;1. Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan;2. Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan;1. Department of Hematology and Oncology, Nagoya University Graduate School of Medicine, Nagoya, Japan;2. Japanese Data Center for Hematopoietic Cell Transplantation, Nagoya, Japan;3. Department of Healthcare Administration, Nagoya University Graduate School of Medicine, Nagoya, Japan;4. Department of Hematology, Japanese Red Cross Medical Center, Tokyo, Japan;5. Division of Hematology, Tokyo Metropolitan Cancer and Infectious Diseases Center Komagome Hospital, Tokyo, Japan;6. Department of Hematology, Kanagawa Cancer Center, Yokohama, Japan;7. Division of Hematology, Saitama Medical Center, Jichi Medical University, Saitama, Japan;8. Division of Hematopoietic Stem Cell Transplantation, National Cancer Center Hospital, Tokyo, Japan;9. Department of Hematology, Toranomon Hospital, Tokyo, Japan;10. Division of Molecular Therapy, Advanced Clinical Research Center, Institute of Medical Science, University of Tokyo, Tokyo, Japan;11. Department of Cell Processing and Transfusion, Research Hospital, Institute of Medical Science, University of Tokyo, Tokyo, Japan;12. Division of Epidemiology and Prevention, Aichi Cancer Center Research Institute, Nagoya, Japan;13. Department of Hematology, Japanese Red Cross Nagoya First Hospital, Nagoya, Japan;1. SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440746, Republic of Korea;2. College of Engineering, Mathematics and Physical Sciences, University of Exeter, Stocker Road, Exeter EX4 4QL, United Kingdom;3. Mask Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd, Hwaseong 445-701, Republic of Korea;1. Faculty of Physics, Semnan University, Semnan 35195-363, Iran;2. Faculty of Physics, Shahrood University of Technology, Shahrood, Iran |
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| Abstract: | The electrical and optical properties of the a-Si:H films deposited by inductively-coupled plasma chemical vapour deposition (ICP-CVD) have been investigated. The ICP-CVD a-Si:H films deposited at 30 mTorr exhibited the deposition rate of 0.9 Å/s and the hydrogen content of 17 at.%. A novel coplanar self-aligned a-Si:H thin film transistor has been fabricated using Ni-silicide gate and source/drain contacts. The coplanar a-Si:H TFT exhibited a field effect mobility of 0.6 cm2/Vs, a threshold voltage of 2.3 V, a subthreshold slope of 0.5 V/dec. |
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