| Abstract: | We examine the effectiveness of hydrogen passivation as a function of defect type and microstructure at grain boundaries (GBs) in multicrystalline silicon. We analyze a solar cell with alternating mm‐wide bare and SiNx‐coated stripes using laser‐beam‐induced current, electron backscatter diffraction, X‐ray fluorescence microscopy, and defect etching to correlate pre‐ and post‐hydrogenation recombination activity with GB character, density of iron‐silicide nanoprecipitates, and dislocations. A strong correlation was found between GB recombination activity and the nature/density of etch pits along the boundaries, while iron silicide precipitates above detection limits were found to play a less significant role. Copyright © 2010 John Wiley & Sons, Ltd. |
