Plasma enhanced chemical vapor deposition of nanocrystalline silicon films from SiF4-H2-He at low temperature |
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| Affiliation: | 1. Professor and Chairman, Prosthodontic Department, Faculty of Dentistry, Alexandria University, Alexandria, Egypt;2. Demonstrator of Fixed Prosthodontics, Conservative Dentistry Department, Faculty of Dentistry, Alexandria University, Alexandria, Egypt;1. Institut Charles Gerhardt de Montpellier, UMR 5253, Université de Montpellier, CNRS, ENSCM, 34095, Montpellier Cedex 5, France;2. Instituto de Tecnología en Polímeros y Nanotecnología (ITPN), Facultad de Ingeniería, Universidad de Buenos Aires, CONICET Las Heras, 2214, CP 1127AAR Buenos Aires, Argentina;3. CERMAV-CNRS, 601 rue de la Chimie, St Martin d’Hères, 38041, Grenoble, Cedex 9, France;4. Réseau sur le Stockage Electrochimique de l’Energie (RS2E), FR CNRS, 3459, France;1. Department of Business Administration, Jubail Industrial College, Jubail, Saudi Arabia;2. Department of Management, College of Business & Economics, Debre Tabor University, Amhara, Ethiopia;3. Department of Mathematics, Bharath Institute of Higher Education and Research, Selaiyur, Chennai 600 073, Tamil Nadu, India;1. Research Associate, Division of Removable Prosthodontics, Fukuoka Dental College, Fukuoka, Japan;2. Dental Technician, Central Dental Laboratory, Fukuoka Dental College Hospital, Fukuoka, Japan;3. Professor, Division of Removable Prosthodontics, Fukuoka Dental College, Fukuoka, Japan;1. Advanced Material Analysis Division, Research Initiative for Supra-Materials, Shinshu University, 4-17-1 Wakasato, Nagano 380 – 8553, Japan;2. Materials Engineering Program, Office of Education, Faculty of Engineering, Burapha University, Long-Hard Bangsaen Road, Mueang, Chonburi 20131, Thailand;3. Department of Electrical and Computer Engineering, Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380 – 8553, Japan;4. Physics Program, Faculty of Science Technology and Agriculture, Yala Rajabhat University, 133 Thesabal 3 Road, Muang, Yala 95000, Thailand;5. College of Materials Innovation and Technology, King Mongkut’s Institute of Technology Ladkrabang, Chalongkrung Road, Ladkrabang, Bangkok 10520, Thailand |
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| Abstract: | A high degree of crystallinity is obtained in nc-Si:H films deposited by r.f. PECVD, produced from SiF4-H2-He mixtures. The amorphous-to-nanocrystalline transition is favored because of the presence of F atoms, which preferentially etch the amorphous phase. The addition of He to the SiF4-H2 gas mixture gives an increase of F and H atoms in the plasma, thus inducing higher crystallinity. A further improvement in the nc-Si:H film structure and properties is obtained by adjusting the r.f. power and the deposition temperature. Under optimized plasma conditions, substrate temperatures as low as 120°C can be reached for the deposition of nc-Si:H having 100% of crystallinity. |
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