Electro-optical modulators using novel buried waveguides inGaInAsP/InP material |
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| Authors: | Bourbin Y. Enard A. Blondeau R. Razeghi M. Rondi D. Papuchon M. De Cremoux B. |
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| Affiliation: | Thomson-CSF/LCR, Orsay; |
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| Abstract: | Losses as low as 0.4±0.2 dB/cm and electro-optical modulation efficiencies as high as 5°/V/mm have been obtained in single mode waveguides employing a novel buried structure in GaInAsP/InP grown by LPMOCVD and processed by selective chemical etching. Such modulators are potentially excellent candidates for integrated optoelectronics |
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