| 长腔半导体激光器中的纵模行为 |
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| 引用本文： | 沈峰,解金山,郭长志. 长腔半导体激光器中的纵模行为[J]. 中国激光, 1985, 12(11): 664-667 |
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| 作者姓名： | 沈峰 解金山 郭长志 |
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| 作者单位： | 武汉邮电科学研究院(沈峰，解金山)，北京大学物理系(郭长志) |
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| 摘 要： | 实验发现并从理论上证明腔长很长的质子轰击条形GaAs-GaAlAs激光器,能在阈值以上某较宽电流范围内实现稳定单纵模工作.
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| 收稿时间： | 1984-10-05 |
Longitudinal-mode behavior of stripe-geometry semiconductor lasers with a very long cavity |
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| Abstract: | The longitudinal-mode behaviors of proton-bombarded stripe-geometry GaAs-GaAlAs laser with a very long cavity have been investigated experimentally and theoritically. It has been found that the devices with a long cavities can maintain stable single longitudinal mode operation over wide current range above threshold. |
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