Dry etching of TaN thin film using CH4/Ar inductively coupled plasma |
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| Affiliation: | 1. Product Accelerator, University of Auckland, PB 92019, Auckland 1142, New Zealand;2. School of Chemical and Physical Sciences, Victoria University of Wellington, PO Box 600, Wellington 6140, New Zealand;3. Department of Chemical and Materials Engineering, University of Auckland, Private Bag 92019, Auckland 1142, New Zealand;4. School of Chemical Sciences, University of Auckland, PB 92019, Auckland 1142, New Zealand;1. College of Material Science and Engineering, Hunan University, Changsha, 410082, China;2. Key Laboratory of Spray Deposition Technology of Hunan Province, Changsha, 410082, China;1. Physics Department, Carnegie Mellon University, Pittsburgh, PA, United States;2. Physics Department, University of Arizona, Tuscon, AZ, United States;3. Materials Science and Engineering Department, University of Wisconsin-Madison, Madison, WI, United States;1. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287, USA;2. School of Computing, Informatics, and Decision Systems Engineering, Arizona State University, Tempe, AZ 85281, USA |
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| Abstract: | In this research, we investigated the TaN etch rate and selectivity with under layer (HfO2) and mask material (SiO2) in inductively coupled CH4/Ar plasma. As the CH4 content increased from 0% to 80% in CH4/Ar plasma, the TaN etch rate was increased from 11.9 to 22.8 nm/min. From optical emission spectroscopy (OES), the intensities for CH 431 nm] and H 434 nm] were increased with the increasing CH4 content from 0% to 100% in CH4/Ar plasma. The results of x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) showed no accumulation of etch by-products from the etched surface of TaN thin film. As a result of OES, AES and XPS analysis, we observed the etch by-products from the surfaces, such as Ta–N–CH and N–CH bonds. Based on the experimental results, the TaN etch was dominated by the chemical etching with the assistance of Ar sputtering in reactive ion etching mechanism. |
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