Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing |
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| Affiliation: | 1. Center of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, China;2. Suzhou Institute of Shandong University, Suzhou 215123, China;3. School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, United Kingdom;1. Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Republic of Korea;2. Center for Research Facilities, Chungnam National University, Daejeon 34134, Republic of Korea;3. Department of Materials Science and Engineering, KAIST, Daejeon 34141, Republic of Korea;4. Biosystems Machinery Engineering, Chungnam National University, Daejeon 34134, Republic of Korea;1. Dept. of Electronics Eng., Incheon National Univ., Incheon 406-772, Republic of Korea;2. Dept. of Electronic Materials Eng., Kwangwoon Univ., Seoul 139-701, Republic of Korea |
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| Abstract: | We report the fabrication and electrical characteristics of high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a polymer gate dielectric prepared by spin coating on a glass substrate at different oxygen partial pressure values. The transmittance of the deposited polymer film was greater than 90% at 600 nm a-IGZO thin films were deposited on glass substrates using RF magnetron sputtering at different oxygen partial pressure values. The a-IGZO TFTs were prepared by rapid thermal annealing at 350 °C for 10 min at a 0.2% oxygen partial pressure. It was observed that a-IGZO TFTs with an active channel layer exhibited enhanced mode operation, a threshold voltage of 1 V, an on-off current ratio of 103, and a field-effect mobility of 18 cm2/Vs. |
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