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Effect of SiO2 buffer layer thickness on the properties of ITO/Cu/ITO multilayer films deposited on polyethylene terephthalate substrates |
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| Affiliation: | 1. School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China;2. School of Science, Shandong University of Technology, ZiBo, Shandong 255049, PR China;3. Research Center of Laser Fusion, Chinese Academy of Engineering Physics, MianYang, Sichuan 621900, PR China |
| Abstract: | Transparent conductive ITO/Cu/ITO films were deposited on polyethylene terephthalate (PET) substrates with a SiO2 buffer layer by magnetron sputtering using three cathodes at room temperature. The effect of the SiO2 buffer layer thickness on the electrical and optical properties of ITO/Cu/ITO films was investigated. The ITO/Cu/ITO film deposited on the 40 nm thick SiO2 buffer layer exhibits a sheet resistance of 143Ω/sq and transmittance of 65% at 550 nm wavelength. Highly transparent ITO/Cu/ITO films with a transmittance of 80% and a sheet resistance of 98.7Ω/sq have been obtained by applying −60 V substrate bias. |
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