Effect of electron beam irradiation on structure and properties of SiCN thin films prepared by plasma assisted radio frequency magnetron sputtering |
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| Affiliation: | 1. Department of Materials Physics and Chemistry, Harbin Institute of Technology, Harbin 150001, PR China;2. Center for Condensed Matter Science and Technology, Department of Physics, Harbin Institute of Technology, Harbin 150001, PR China;1. Key Laboratory of Aerospace Advanced Materials and Performance, School of Materials Science and Engineering, Beihang University, Beijing, 100191, China;2. National Key Laboratory of Advanced Functional Composite Materials, Aerospace Research Institute of Materials and Processing Technology, Beijing, 100076, China;1. Key Laboratory of Aerospace Advanced Materials and Performance, School of Materials Science and Engineering, Beihang University, Beijing 100191, China;2. National Key Laboratory of Advanced Functional Composite Materials, Aerospace Research Institute of Materials and Processing Technology, Beijing 100076, China;1. Siberian Federal University, 660041, Russia;2. Reshetnev Siberian State Aerospace University, Krasnoyarsk, 660037, Russia;3. Krasnoyarsk Scientific Center of the Siberian Branch of the Russian Academy of Science, 660036, Krasnoyarsk, Russia;4. Kirensky Institute of Physics, Russian Academy of Sciences, 660036, Russia;1. School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, Henan 450001, China;2. Key Laboratory of Material Physics of Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China;3. School of Physics and Engineering, Zhengzhou University, Zhengzhou, Henan 450052, China;4. Henan Key Laboratory of Aeronautical Material and Application Technology, Zhengzhou University of Aeronautics, Zhengzhou, Henan 450046, China;5. Department of Materials Science and Engineering, University of Central Florida, Orlando, FL 32826, USA |
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| Abstract: | Silicon carbon nitride thin films were deposited on Si (100) substrate at room temperature by plasma assisted radio frequency magnetron sputtering. The bonding structure and properties of SiCN films irradiated by pulsed electron beams were studied by means of X-ray photoelectron spectroscopy and nano-indentation. The results showed that electron beam irradiation had a great effect on the structure and property of the films. Under sputtering gas pressure of 3.7 Pa, a transition from the (Si,C)Nx bonded structure to the (Si,C)3N4 bonded structure was found in the SiCN thin film with electron beam irradiation. At sputtering gas pressure of 6.5 Pa, the enhancement of hardness in the SiCN film after treatment with electron beam irradiation resulted from the promotion of the sp3-hybridization of carbons bonds. |
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