Enhancement of resist plasma erosion rates by electron-beam hardening |
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| Authors: | Morgan RA Pollard CJ |
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| Affiliation: | British Telecom Research Laboratories, Microelectronics Division, Ipswich, UK; |
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| Abstract: | A nonthermal method of hardening positive photoresists by means of a scanned high-energy electron beam in preference to direct resist heating is described. It has been established that moderate electron doses produce significant resist cross-linking without flow. Plasma etch resistance can be enhanced in the resists with no degradation of the as-developed line profile. |
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