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The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET
Authors:Khalilloev  M M  Jabbarova  B O  Nasirov  A A
Affiliation:1.Urgench State University, 220100, Urgench, Uzbekistan
;2.National University of Uzbekistan, 100200, Tashkent, Uzbekistan
;
Abstract:Technical Physics Letters - The dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a junctionless field-effect transistor (FinFET) with rectangular and trapezoidal...
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