Epitaxy of GaN(0001) and GaN(10 $$\bar {1}$$ 1) Layers on Si(100) Substrate |
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| Authors: | Bessolov V N Kompan M E Konenkova E V Panteleev V N Rodin S N Shcheglov M P |
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| Affiliation: | 1.Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
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| Abstract: | Technical Physics Letters - Two different approaches to epitaxy of 4-μm-thick layers of polar GaN(0001) and semipolar GaN(10 $$\bar {1}$$ 1) on a V-shaped nanostructured Si(100) substrate with... |
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