Epitaxy of GaN(0001) and GaN(10 $$bar {1}$$ 1) Layers on Si(100) Substrate |
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Authors: | Bessolov V. N. Kompan M. E. Konenkova E. V. Panteleev V. N. Rodin S. N. Shcheglov M. P. |
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Affiliation: | 1.Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia ; |
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Abstract: | Technical Physics Letters - Two different approaches to epitaxy of 4-μm-thick layers of polar GaN(0001) and semipolar GaN(10 $$bar {1}$$ 1) on a V-shaped nanostructured Si(100) substrate with... |
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