MOVPE growth and optical properties of gan deposited on c-plane sapphire |
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Authors: | O. Briot B. Gil M. Tchounkeu R. L. Aulombard F. Demangeot J. Frandon M. Renucci |
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Affiliation: | (1) Centre National de la Recherche Scientifique, Université de Montpellier, II-case courrier, 074-34095 Montpellier Cedex 5, France;(2) Laboratoire de Physique des solides, Université Paul Sabatier, 118 Route deNarbonne, 31062 Toulouse Cedex, France |
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Abstract: | We address combined utilization of temperature dependent reflectance, photo-luminescence, and Raman spectroscopy measurements to optimize the struc-tural and electronic properties of GaN epilayers deposited on sapphire. Last, we study residual strain fields in such epilayers. |
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Keywords: | GaN Growth Metalorganic vapor phase epitaxy (MOVPE) Photoluminescence Raman spectroscopy |
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