MOVPE growth and optical properties of gan deposited on c-plane sapphire |
| |
| Authors: | O. Briot B. Gil M. Tchounkeu R. L. Aulombard F. Demangeot J. Frandon M. Renucci |
| |
| Affiliation: | (1) Centre National de la Recherche Scientifique, Université de Montpellier, II-case courrier, 074-34095 Montpellier Cedex 5, France;(2) Laboratoire de Physique des solides, Université Paul Sabatier, 118 Route deNarbonne, 31062 Toulouse Cedex, France |
| |
| Abstract: | We address combined utilization of temperature dependent reflectance, photo-luminescence, and Raman spectroscopy measurements to optimize the struc-tural and electronic properties of GaN epilayers deposited on sapphire. Last, we study residual strain fields in such epilayers. |
| |
| Keywords: | GaN Growth Metalorganic vapor phase epitaxy (MOVPE) Photoluminescence Raman spectroscopy |
| 本文献已被 SpringerLink 等数据库收录！ |
|
