纳米硅薄膜的低压化学气相沉积和电学性能研究

利用普通低压化学气相沉积技术在玻璃衬底上制备了大面积的纳米硅薄膜。不同温度下薄膜暗电导率的测试研究表明 ,薄膜的室温暗电导率随成膜温度的升高而增加 ,相应的电导激活能降低。热激活隧道击空机制可以较好地解释纳米硅薄膜特殊的电学性能。原位后续热处理研究表明 ,延长热处理时间以及采用低温成膜、高温后续退火的热处理方法均能有效提高其室温暗电导率。

Preparation of Nano-silicon Films by Low Pressure Chemical Vapor Deposition and Their Electrical Properties

Nano-sized silicon films with large area were prepared by normal Low Pressure Chemical Vapor Deposition method. Measurements of conductivity of film under different temperatures show that the room temperature conductivity of films increase with the increasing of film deposited temperature, while the activity energy of film conductivity decreases. Mechanism of thermal activated tunneling explains the special electrical properties of nano-silicon films. Investigations of the post-annealing show that both of extending of post-annealing time and low-temperature film deposition with high-temperature post-annealing may improve the room-temperature dark conductivity of films.