| SiC的光谱特性研究 |
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| 引用本文： | 朱建军,宠海,刘素英,梁骏吾. SiC的光谱特性研究[J]. 稀有金属, 1999, 23(1): 35-41 |
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| 作者姓名： | 朱建军 宠海 刘素英 梁骏吾 |
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| 作者单位： | 中国科学院半导体研究所,北京,100083 |
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| 摘 要： | 综合分析了３Ｃ－ＳｉＣ、４Ｈ－ＳｉＣ和６Ｈ－ＳｉＣ的光致发光谱，总结了它们的光谱特性，特别分析了ＳｉＣ结构中的不等价晶位对ＳｉＣ的光致光谱的影响。
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| 关 键 词： | 不等价晶位 光致发光谱 半导体 光谱特性 碳化硅 |
| 修稿时间： | 1997-11-04 |
Study on Photoluminescence Spectra of SiC |
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| Zhu Jianjun,Pang Hai,Liu Suying,Liang Junwu. Study on Photoluminescence Spectra of SiC[J]. Chinese Journal of Rare Metals, 1999, 23(1): 35-41 |
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| Authors: | Zhu Jianjun Pang Hai Liu Suying Liang Junwu |
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| Abstract: | C SiC, 4H SiC and 6H SiC are the three kinds of silicon carbide (SiC) applied most extensively in semiconductor device fabrications. Their photo luminescence (PL) spectra were analysed and the characteristics of the spectra were summarized. Special attention was paid to the inequivalent sites existed in SiC and their effects on the PL spectra of SiC. |
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| Keywords: | SiC Inequivalent sites Photoluminescence 4A or 4D complex |
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