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多晶硅锭定向凝固过程的数值模拟
引用本文:陈国红,王滋渊,肖益波,瞿海斌.多晶硅锭定向凝固过程的数值模拟[J].电子工业专用设备,2009,38(6):40-43,46.
作者姓名:陈国红  王滋渊  肖益波  瞿海斌
作者单位:中国电子科技集团公司第四十八研究所,湖南,长沙,410111
摘    要:研究了多晶硅锭定向凝固过程中晶体和熔体中的温度分布、固液界面的温度场,并对定向凝固过程进行了数值模拟,对热场对多晶硅晶体生长的影响进行了系统的理论分析和试验验证。

关 键 词:多晶硅锭  定向凝固过程  热场  数值模拟

Numerical Simulation of Directional Solidification Process for the Polycrystalline Silicon Ingot
CHEN Guohong,WANG Ziyuan,XIAO Yibo,QU Haibin.Numerical Simulation of Directional Solidification Process for the Polycrystalline Silicon Ingot[J].Equipment for Electronic Products Marufacturing,2009,38(6):40-43,46.
Authors:CHEN Guohong  WANG Ziyuan  XIAO Yibo  QU Haibin
Affiliation:(The 48th Research Institute of China Electronic Technology Group Company, Changsha 410111, China)
Abstract:In this paper, the temperature distribution of the crystal and melt for the polycrystalline sili- con ingot directional solidification process was discussed. And the temperature field of the solid-liquid interface was studied. The directional solidification process was visualized by the numerical simula- tion. A systematic theoretical analysis and experimental validation was provided for the effect about thermal field to polycrystalline silicon crystal growth.
Keywords:Polycrystalline silicon ingot  Directional solidification process  Thermal field  Numerical simulation
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