Low frequency noise in 6H-SiC MOSFET's |
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Authors: | Casady JB Dillard W Johnson RW Agarwal AK Siergiej RR Wagner WE III |
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Affiliation: | Center for Commercial Dev., Auburn Univ., AL; |
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Abstract: | The noise spectra for n-channel, depletion-mode MOSFETs fabricated in 6H-SiC material were measured from 1-105 Hz at room temperature. Devices were biased in the linear regime, where the noise spectra was found to be dependent upon the drain-to-source bias current density. At a drain-to-source current of 50 μA for MOSFETs with a W/L of 400 μm/4 μm, the measured drain-to-source noise power spectral density was found to be A/(fλ), with A being 2.6×10-12 V2, and λ being between 0.73 and 0.85, indicating a nonuniform spatial trap density skewed towards the oxide-semiconductor interface. The measured Hooge parameter (αH) was 2×10-5. This letter represents the first reported noise characterization of 6H-SiC MOSFET's |
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