Deep-level dominated current-voltage characteristics of buriedimplanted oxide silicon-on-insulator |
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Authors: | Das K Palmour JW Posthill JB Humphreys TP O'Sullivan-French J Byrd NJ Lu D Wortman JJ Parikh NH |
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Affiliation: | Dept. of Mater. Sci., North Carolina State Univ., Raleigh, NC; |
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Abstract: | Current-voltage characteristics of Au contacts formed on buried implanted oxide silicon-on-insulator (SOI) structures are discussed, which indicate that the dominant transport mechanism is space-charge-limited current (SCLC) conduction in the presence of deep-level states. The deep-level parameters, determined using a simple analysis, appear to be sensitive to anneal conditions used and subsequent processing. Silicon implanted with 1.7×1018 cm-2 oxygen ions at 150 keV following a 1200°C anneal for 3 h shows deep level 0.37 eV below the conduction band edge with a concentration of unoccupied traps of ~ 2×1015 cm-3 . In contrast, arsenic ion implantation, in the 1200°C annealed material with a dose of 1.5×1012 cm-2 at 60 keV and activated by rapid thermal annealing (RTA), introduces a deep level 0.25 eV below the conduction band edge with an unoccupied trap concentration of ~6×1017 cm-2 |
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