(1) Electronic Science and Technology Division, Naval Research Laboratory, Washington, DC 20375, USA
Abstract:
Stacking faults within 4H-SiC PiN diodes are known to be detrimental to device operation. Here, we present electroluminescence
(EL) images of 4H-SiC PiN diodes providing evidence that electrically and optically stimulated Shockley stacking fault (SSF)
propagation is a reversible process at temperatures as low as 210°C. Optical beam induced current (OBIC) images taken following
complete optical stressing of a PiN diode and that lead to a small number of completely propagated SSFs provide evidence that
such defects propagate across the n–/p+ interface and continue to grow throughout the p+ layer. These observations bring about
questions regarding the validity of the currently accepted driving force mechanism for SSF propagation.