Low-leakage InGaAs photodiodes grown on gaAs substrates using a graded strained-layer superlattice |
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| Authors: | Hodson PD Wallis RH Davies JI |
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| Affiliation: | Plessey Research (Caswell) Limited, Towcester, UK; |
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| Abstract: | InxGa1?xAs layers with In concentrations up to 35% have been grown on GaAs substrates by MOCVD using a GaAs/InxGa1?xAs superlattice with graded layer thicknesses to accommodate the lattice mismatch. 105 ?m-diameter PIN diodes fabricated from this material have leakage currents below 1 nA at ? 10 V, comparable to devices from lattice-matched material on InP substrates. |
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