Correlation of structural and optoelectronic properties of thin film silicon prepared at the transition from microcrystalline to amorphous growth |
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Authors: | Steve Reynolds Reinhard Carius Friedhelm Finger Vladimir Smirnov |
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Affiliation: | aDivision of Electronic Engineering and Physics, University of Dundee, Dundee DD1 4HN, UK;bIEF-5 Photovoltaik, Forschungszentrum Jülich, D-52425 Jülich, Germany |
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Abstract: | Photovoltaic properties of 4 µm thick microcrystalline silicon p–i–n solar cells have been studied, over a range of crystallinity determined using Raman spectroscopy. Low-crystallinity material (below 10%) appears to absorb disproportionately strongly in the infrared, possibly due to increased light scattering or to relaxation of the crystal momentum selection rule. A minimum in solar cell efficiency is observed under AM1.5 illumination when VOC ≈ 580 mV, with blue response most strongly affected. This is consistent with a reduction in electron mobility to a value below that of amorphous silicon for low-crystallinity material, in agreement with time-of-flight measurements. |
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Keywords: | Solar cells Amorphous silicon Microcrystalline silicon Raman scattering |
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