Modification of germanium nanoclusters in GeO x films during isochronous furnace and pulse laser annealing

We have studied the formation and modification of germanium nanoclusters in GeO _x films under the action of pulse laser and isochronous furnace annealing. Pulse treatments were effected using either a Tisapphire laser operating at a wavelength of λ = 800 nm and a pulse duration τ of about 30 fs or a KrF excimer laser with λ = 248 nm and τ = 25 ns. The pulse annealing stimulated both the crystallization of initial amorphous Ge nanoclusters in GeO _x matrix and the formation of new nanoclusters. In order to prevent the evaporation of films under the action of laser radiation, the samples were covered with a protective layer of SiN _x O _y . The proposed approach can be used for the modification of dimensions and phase composition of Ge clusters in GeO _x films.