MoS2/Rubrene van der Waals Heterostructure: Toward Ambipolar Field‐Effect Transistors and Inverter Circuits |
| |
| Authors: | Xuexia He WaiLeong Chow Fucai Liu BengKang Tay Zheng Liu |
| |
| Affiliation: | 1. School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, China;2. Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore;3. Centre for Micro‐/Nano‐electronics (NOVITAS), School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore |
| |
| Abstract: | 2D transition metal dichalcogenides are promising channel materials for the next‐generation electronic device. Here, vertically 2D heterostructures, so called van der Waals solids, are constructed using inorganic molybdenum sulfide (MoS2) few layers and organic crystal – 5,6,11,12‐tetraphenylnaphthacene (rubrene). In this work, ambipolar field‐effect transistors are successfully achieved based on MoS2 and rubrene crystals with the well balanced electron and hole mobilities of 1.27 and 0.36 cm2 V?1 s?1, respectively. The ambipolar behavior is explained based on the band alignment of MoS2 and rubrene. Furthermore, being a building block, the MoS2/rubrene ambipolar transistors are used to fabricate CMOS (complementary metal oxide semiconductor) inverters that show good performance with a gain of 2.3 at a switching threshold voltage of ?26 V. This work paves a way to the novel organic/inorganic ultrathin heterostructure based flexible electronics and optoelectronic devices. |
| |
| Keywords: | 2D materials ambipolar field‐effect transistors heterostructures inverter circuits |
|
|
