Electrical characterization of silicon surface after reactive ion etching of silicon dioxide by CHF3

We have conducted a comprehensive investigation into the electrical characteristics of Si surface after removal of a SiO₂ layer by CHF₃ reactive ion etching. The metal-semiconductor contact structure was used in the study, including the results after heating the metal-semiconductor contact to its eutectic temperature. It is concluded that after CHF₃ etching the surface is trapped with positive charge, which is partly removed by heating the metal-semiconductor contact to its eutectic temperature.