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The effect of hydrogen in the mechanism of aluminum-induced crystallization of sputtered amorphous silicon using scanning Auger microanalysis |
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| Authors: | Maruf Hosssain Harry M Meyer III Husam H Abu-Safe Hameed A Naseem William D Brown |
| Affiliation: | aArkansas Advanced Photovoltaic Research Center, Department of Electrical Engineering, 3217 Bell Engineering Center, University of Arkansas, Fayetteville, Arkansas 72701, USA bMicroscopy, Microanalysis, and Microstructures Group, Metals and Ceramics Division Oak Ridge National Laboratory, 1 Bethel valley Rd., Oak Ridge, TN 37831, USA |
| Abstract: | The metal-induced crystallization (MIC) of hydrogenated sputtered amorphous silicon (a-Si:H) using aluminum has been investigated using X-ray diffraction (XRD) and scanning Auger microanalysis (SAM). Hydrogenated, as well as non-hydrogenated, amorphous silicon (a-Si) films were sputtered on glass substrates, then capped with a thin layer of Al. Following the depositions, the samples were annealed in the temperature range 200 °C to 400 °C for varying periods of time. Crystallization of the samples was confirmed by XRD. Non-hydrogenated films started to crystallize at 350 °C. On the other hand, crystallization of the samples with the highest hydrogen (H2) content initiated at 225 °C. Thus, the crystallization temperature is affected by the H2 content of the a-Si. Material structure following annealing was confirmed by SAM. In this paper, a comprehensive model for MIC of a-Si is developed based on these experimental results. |
| Keywords: | Hydrogen Crystallization Amorphous materials Sputtering |
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