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湿法腐蚀的红外热像对比研究
引用本文:范超,叶玉堂,焦世龙,刘霖,陈镇龙,吴云峰,王昱琳,田骁. 湿法腐蚀的红外热像对比研究[J]. 光电子.激光, 2006, 17(7): 875-879
作者姓名:范超  叶玉堂  焦世龙  刘霖  陈镇龙  吴云峰  王昱琳  田骁
作者单位:电子科技大学光电信息学院,四川,成都,610054
基金项目:国家高技术研究发展计划(863计划);教育部科学技术研究项目;四川省科技计划;国防重点实验室基金
摘    要:提出了一种研究半导体湿法腐蚀进程的红外热像法。将半导体基片浸泡于化学试剂中,利用红外热像仪探测红外腐蚀信号,并由计算机进行处理,得到热像图。对GaAs在不同配比溶剂中的腐蚀进程进行了红外热像的对比研究,结果表明:红外热像法可以观测到对比实验的显著差异,并直观地表征了基片、腐蚀剂以及腐蚀时间的相互关系。

关 键 词:红外热像  湿法腐蚀  半导体
文章编号:1005-0086(2006)07-0875-05
收稿时间:2005-09-25
修稿时间:2005-09-252006-03-06

A Contrastable Research of Wet-etching Using Infrared Thermo-image
FAN Chao,YE Yu-tang,JIAO Shi-long,LIU Lin,CHEN Zhen-long,WU Yun-feng,WANG Yu-lin,TIAN Xiao. A Contrastable Research of Wet-etching Using Infrared Thermo-image[J]. Journal of Optoelectronics·laser, 2006, 17(7): 875-879
Authors:FAN Chao  YE Yu-tang  JIAO Shi-long  LIU Lin  CHEN Zhen-long  WU Yun-feng  WANG Yu-lin  TIAN Xiao
Affiliation:School of Opto-electronic Information, University of Electronic Science and Technology, Chengdu 610054,China
Abstract:An infrared thermalimage method which is used to study the wet etching process of semiconductor is proposed. The substrate of semiconductor is dipped into a chemical bath,the infrared radiation signal of etching is detected by the infrared thermo-image instrument and sent to computer to process,the picture of infrared thermo-image can be obtained by this method. The wet-etching of GaAs in different chemical bathes is discussed. Theoretical analysis and experimental result show that the distinct difference of experiment can be monitored by the new infrared thermo-image method,and the relative relation of the three main factors-substrate,chemical baths and time of etching--can be indicated by the method directly.
Keywords:infrared thermo-image   wet-etching   semiconductor
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