Growing FeIn2S4 single crystals and fabrication of photosensitive structures on their basis

Bulk single crystals of FeIn₂S₄ have been grown for the first time by the method of directional crystallization of an almost stoichiometric melt. The first photosensitive structures of the In(Al)/FeIn₂S₄ have been fabricated. Using the crystals grown, the first spectra of photosensitivity of the new structures have been obtained at T = 300 K. Based on an analysis of the photosensitivity spectra, it has been established that the edge absorption of FeIn₂S₄ is formed by indirect and direct interband transitions, and the values of the energy gap corresponding to these transitions have been estimated. A conclusion was made on the possibility of applying the structures obtained in wideband photoconverters.