High-performance laser-processed polysilicon thin-film transistors |
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Authors: | Giust GK Sigmon TW Boyce JB Ho J |
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Affiliation: | Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ; |
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Abstract: | We present electrical results from hydrogenated laser-processed polysilicon thin-film transistors (TFT's) fabricated using a simple four-mask self-aligned aluminum top-gate process. Transistor field-effect mobilities of 280-450 cm2/Vs and on/off current ratios of more than 108 are measured in these devices. Except for the amorphous-silicon deposition step, the highest processing temperature that the substrate was subjected to was 350°C. Such good performance is attributed to an optimized laser-crystallization process combined with hydrogenation |
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