Liquid phase epitaxial growth of InAs1-xSbx on GaSb |
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Authors: | E. R. Gertner A. M. Andrews L. O. Bubulac D. T. Cheung M. J. Ludowise R. A. Riedel |
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Affiliation: | (1) Rockwell International Science Center, 91360 Thousand Oaks, California |
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Abstract: | Reported here, for the first time, is the lattice matched growth of InAs1-xSbx on GaSb. The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth technique. Liquid compositions for lattice matching conditions have been determined in the 400-600°C range. Epitaxial growth has been examined for (100), (111)B and (111)A orientations. Dislocation etch pit densities for lattice matched, and near lattice matched conditions are shown to be less than 104-cm−2 and 105-cm−4, respectively. The composition of the epitaxial layers are determined by the Gandolfi X-ray diffraction technique and compositional homogeneity has been confirmed by SEM X-ray analysis. Some material related device properties which demonstrate the reproducibility of the growth technique are presented. |
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Keywords: | InAs1-xSbx Liquid Phase Epitaxy |
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