Effects of porous silicon morphology on ballistic electron emission

Porous silicon ballistic electron emission source with a structure of metal/porous silicon/Si/metal is obtained by anodization, rapid thermal oxidation, and sputtering. The microstructures of porous silicon layers are characterized by means of scanning electron microscope. The results show that disordered pores are formed at anodization current densities of 15 mA/cm2, 30 mA/cm2, and 45 mA/cm2 for 5 min, respectively. However, straight pores are formed at anodization current densities of 60 mA/cm2, and 75 mA/cm2 for 5 min, respectively. The electron emission characteristic of porous silicon ballistic electron emission sources is measured in vacuum. The results show that electrons emitted into the vacuum from the porous silicon samples with disordered pores. Under a bias condition, injected electrons from the substrate are accelerated by the strong electric field on the surfaces of the Si nanocrystallites in disordered pores, and then emitted into the vacuum through Pt film. However, no electron emission is observed in porous silicon samples with straight pores. It attributes to the lack of Si nanocrystallites in straight pores. So there is not accelerating tunnels enough for electrons. According to disordered or straight pores, we can estimate whether PS samples emit electrons or not.