Titanium silicide/germanide formation on submicron features for high mobility SiGe channel field effect transistors |
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Authors: | P D Agnello V P Kesan M Tejwani J A Ott |
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Affiliation: | (1) IBM T.J. Watson Research Center, 10598 Yorktown Heights, NY |
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Abstract: | The formation of self-aligned Ti(Si(1−x)Ge(x))2 on submicron lines is described. The silicide/germanide is formed by reacting sputtered Ti with epitaxially grown Si(1−x)Ge(x) of composition and thickness relevant to high mobility Si(1−x)Ge(x) channel field effect transistors. Ti(Si(1−x)Ge(x))2 formation on narrow lines was carried out on phosphorous doped material, because of the well known difficulties of forming
silicide on heavily n-doped silicon. A companion set of boron doped blanket films was also processed. The results show that
the process temperature required for the minimization of silicide/germanide sheet resistance is reduced as compared to silicide
formation on Si alone. However, the silicide/germanide films agglomerate with increased high temperature processing more easily
than pure silicide. The thermal stability is degraded more for films with higher Ge content and is a strong function of dopant
type. Silicide/germanide formation on phosphorous doped Si(1−x)Ge(x) layers with x = 10% have a line width dependence similar to silicide formation. Formation on phosphorous doped Si(1−x)Ge(x) layers with x = 27% display an inverse line width dependence, with higher overall sheet resistance. Formation of silicide/germanide
on blanket films of boron doped Si(1−x)Ge(x) with x = 27% behaved similar to the formation of silicide on silicon. |
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Keywords: | Field effect transistors (FETs) SiGe titanium germanide titanium silicide |
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