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Molecular Beam Epitaxial Growth of Pb_(1-x)Eu_xSe_yTe_(1-y) Double Heterostructure
引用本文:宋航,陈伟立,史智盛,付义. Molecular Beam Epitaxial Growth of Pb_(1-x)Eu_xSe_yTe_(1-y) Double Heterostructure[J]. 中国稀土学报(英文版), 1992, 0(3)
作者姓名:宋航  陈伟立  史智盛  付义
作者单位:Chang chun Institute of Physics Academia Sinica,Chang chun 130021,China,Chang chun Institute of Physics,Academia Sinica,Chang chun 130021,China,Chang chun Institute of Physics,Academia Sinica,Chang chun 130021,China,Chang chun Institute of Physics,Academia Sinica,Chang chun 130021,China
摘    要:A Pb_(1-x)Eu_xSe_yTe_(1-y) double heterostructure was grown successfully on a p-type (100)_oriented PbTesubstrate by molecular beam epitaxy.In order to obtain semiconductor laser emitting at 2~4 μm,the band gapof the active region can be adjusted by controlling Eu composition (x value) in the active region.It was obtainedthat x=0.012,y=0.016 for the active region and x=0.030,y=0.016 for the confinement layers.The resultsmeasured from SEM and electrical properties show that the Pb_(1-x)Eu_xSe_yTe_(1-y) double heterostructure has ahomogeneous morphology and an obvious junction character.


Molecular Beam Epitaxial Growth of Pb_(1-x)Eu_xSe_yTe_(1-y) Double Heterostructure
Song Hang Chen Wei-Li Shi Zhi-Sheng Fu Yi. Molecular Beam Epitaxial Growth of Pb_(1-x)Eu_xSe_yTe_(1-y) Double Heterostructure[J]. Journal of Rare Earths, 1992, 0(3)
Authors:Song Hang Chen Wei-Li Shi Zhi-Sheng Fu Yi
Abstract:
Keywords:PbEuSeTe  Molecular beam epitaxy  Double heterostructure
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