Doping-free fabrication of silicon thin films for schottky solar cell |
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Authors: | Yun Ju-Hyung Park Yun Chang Yi Junsin Woo Chang Su Kim Joondong |
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Affiliation: | Nano-Mechanical Systems Research Center Korea Institute of Machinery and Materials, Daejeon 305343, Korea. |
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Abstract: | Thin film Schottky solar cells were fabricated without doping processes, which may provide an alternative approach to the conventional thin film solar cells in the n-i-p configuration. A thin Co layer was coated on a substrate, which worked as a back contact metal and then Si film was grown above it. Deposition condition may modulate the Si film structure to be a fully amorphous Si (a-Si) or a mixing of microcrystalline Si (mc-Si) and a-Si. A thin Au layer was deposited above the grown Si films, which formed a Schottky junction. Two types of Schottky solar cells were prepared on a fully a-Si film and a mixing of mc-Si and a-Si film. Under one sun illumination, the mixing of mc-Si and a-Si device provided 35% and 68.4% enhancement in the open circuit voltage and fill factor compared to that of the amorphous device. |
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