| 带衬底偏置的MOSFET CAD模型 |
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| 引用本文： | 孙兴初. 带衬底偏置的MOSFET CAD模型[J]. 半导体学报, 1988, 9(2): 120-128 |
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| 作者姓名： | 孙兴初 |
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| 作者单位： | 上海科技大学物理系 上海 |
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| 摘 要： | 本文从器件物理出发结合黑箱方法得到了一个MOSFET的简单的三端器件模型,同时提出了将衬底偏置效应方便地结合进去从而构成四端器件模型的方法.对于模型参数的萃取须作的测量及有关计算方法作了介绍.编制了自动确定参数的计算机程序.参数萃取所需的测量工作量很少.经实际模拟值与实验值比较,表明本模型在精度与简单性方面有良好的兼顾.
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| 关 键 词： | 半导体器件 MOS场效应晶体管 模型化 参数 萃取 |
A MOSFET Model with Substrate Bias for CAD |
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| Sun Xingchu/. A MOSFET Model with Substrate Bias for CAD[J]. Chinese Journal of Semiconductors, 1988, 9(2): 120-128 |
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| Authors: | Sun Xingchu/ |
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| Affiliation: | Sun Xingchu/Department of Physic,Shanghai University of Science and Technology |
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| Abstract: | A simplified three-terminal MOSFET model for CAD is obtained by incorporating blackbox method into the physical model of MOSFET, and then expanded to be a four-terminalMOSFET model by taking into account the effects of substract bias,the modeling of which isalso simplified in order to make it easier to use.A computer program with optimizationalgorithms and least-square curve fitting technique has been used w determine the model pa-rameters automatically.Only simple experimental measurements are required for the parameterextraction.Simulated results obtained from the model are in close agreement with experimentaldata,which shows a compromise of accuracy and simplicity. |
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| Keywords: | Semiconductor device MOS field effect transistor Modeling Parameter Extraction |
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