Low-noise metamorphic HEMTs with reflowed 0.1-/spl mu/m T-gate |
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| Authors: | Lien Y.C. Chang E.Y. Chang H.C. Chu L.H. Huang G.W. Lee H.M. Lee C.S. Chen S.H. Shen P.T. Chang C.Y. |
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| Affiliation: | Dept. of Mater. Sci. & Eng., National Chiao-Tung Univ., Hsinchu, Taiwan; |
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| Abstract: | A 0.1-/spl mu/m T-gate fabricated using e-beam lithography and thermally reflow process was developed and applied to the manufacture of the low-noise metamorphic high electron-mobility transistors (MHEMTs). The T-gate developed using the thermally reflowed e-beam resist technique had a gate length of 0.1 /spl mu/m and compatible with the MHEMT fabrication process. The MHEMT manufactured demonstrates a cutoff frequency f/sub T/ of 154 GHz and a maximum frequency f/sub max/ of 300 GHz. The noise figure for the 160 /spl mu/m gate-width device is less than 1 dB and the associated gain is up to 14 dB at 18 GHz. This is the first report of a 0.1 /spl mu/m MHEMT device manufactured using the reflowed e-beam resist process for T-gate formation. |
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