Design and fabrication of InP micro-ring resonant detectors |
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Authors: | Hai-ming Xin Yong-qing Huang Hai-bo Chen Hui Huang Xiaomin Ren and Xing-guang Zhou |
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Affiliation: | (1) Key Laboratory of Optical Communication and Light wave Technologies, Ministry of Education, Beijing University of Posts and Telecommunications, Beijing, 100876, China |
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Abstract: | The quantum efficiency and the transient response of the InP semiconductor micro-ring resonant detector are analyzed to get
the optimum design parameters. Then the side coupling micro-ring resonant is fabricated using the InP semiconductor material
based on the parameters. The micro-ring resonant cavity has the raius of 80 μm, waveguide width of 3 μm and the coupler gap
of 1 μm. The test results show that the FSR is 0.75 nm, and the FWHM is 0.5 nm, which are consistent with the theoretical calculation results.
The work has been supported by National “973 Program” of China (2003CB314901), the Program for New Century Excellent Talents
in University of China (NCET-05-0111), the National “111 Project” (B07005), and the National Program for Changjiang Scholars
and Innovative Research Team in University of China (No.IRT0609) |
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Keywords: | |
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