Thermodynamic modeling of native point defects and dopants of GaN semiconductors |
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Authors: | Jing-Bo Li Jean-Claude Tedenac |
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Affiliation: | (1) Laboratoire de Physico-chimie de la Matière Condensée, UMR CNRS 5617, cc03, Université Montpellier II, Place E. Bataillon, 34095 Montpellier CEDEX 5, France |
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Abstract: | A thermodynamic modeling of GaN was carried out to describe the thermodynamic behavior of native defects, dopants, and carriers
(free electrons and holes) in GaN semiconductors. The compound energy model (CEM) was used. An unintentionally doped GaN was
taken as an example. Oxygen was introduced into the model as the unintentionally doped impurity, according to the practical
experimental phenomena. The energies of component compounds in the model were defined based on the results of the ab initio
calculations and adjusted to fit experimental data. The thermodynamic properties of the defects and the oxygen doped were
calculated to show the facility of the model. |
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Keywords: | Thermodynamic modeling GaN semiconductors native point defects |
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