Non-destructive Raman evaluation of a heavily doped surface layer fabricated by laser doping with B-doped Si nanoparticles |
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| Affiliation: | 1. Material Analysis Research Center, Teijin Limited, Asahigaoka, Hino, Tokyo 191-8512, Japan;2. Department of Chemistry and Biochemistry, School of Advanced Science and Engineering, Waseda University, Shinjuku-ku, Tokyo 169-8555, Japan;1. Department of Physics, Faculty of Sciences, Gazi University, Ankara, Turkey;2. Department of Opticianry, Vocational school of Medical Sciences, Turgut Özal University, Ankara, Turkey;3. Department of Chemistry, Chemistry Education Department, Gazi University, Ankara, Turkey;1. Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan;2. Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan;1. School of Renewable Energy Technology, Naresuan University, Phitsanulok 65000, Thailand;2. Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand;3. Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand;4. Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand |
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| Abstract: | The heavy B-doping of an intrinsic Si(1 0 0) wafer has been performed by irradiating a B-doped Si nanoparticle film on the surface of the Si(1 0 0) substrate with energy densities of 8.0 and 16.0 J/cm2 by 532-nm laser light. The thicknesses of the heavily doped surface layers were investigated using Raman spectroscopy. The observed 488.0-nm-excited Raman bands were decomposed into two bands: a Fano-type band due to the heavily doped Si surface layer and a Voigt band due to the lightly doped, intrinsic Si region. The analysis of the Fano-type band indicated that the carrier concentration of the heavily doped region was larger than approximately 1019 cm−3. Based on the two-state model, the thicknesses of the heavily doped surface layers were 480 and 630 nm for the samples prepared with energy densities of 8.0 and 16.0 J/cm2, respectively. These values were consistent with those obtained by secondary ion mass spectroscopy (SIMS). |
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| Keywords: | Raman B-doped Si Nanoparticle Laser doping |
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