The synthesis,characterization and DFT calculations of highly volatile aminogermylene precursors and thin film investigation for CVD/ALD technology |
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| Affiliation: | 1. The Key Laboratory of Food Colloids and Biotechnology, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122, China;2. State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;1. Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Chemistry and Chemical Engineering, Harbin Normal University, No. 1 South of Shida Road Limin Development Zone, Harbin, Heilongjiang Province 150025, China;2. Key Laboratory of Synthesis of Functional Materials and Green Catalysis, Colleges of Heilongjiang Province, Harbin Normal University, Harbin 150025, China;3. College of Material Science and Engineering, University of Science and Technology Heilongjiang, Harbin 150022, China;1. Irkutsk Division of the Institute of Laser Physics, Siberian Branch of the Russian Academy of Sciences, ul. Lermontova 130a, Irkutsk, 664033, Russia;2. V.S. Sobolev Institute of Geology and Mineralogy, Siberian Branch of the Russian Academy of Sciences, pr. Akademika Koptyuga 3, Novosibirsk, 630090, Russia;3. A.P. Vinogradov Institute of Geochemistry, Siberian Branch of the Russian Academy of Sciences, ul. Favorskogo 1a, Irkutsk, 664033, Russia;4. Geochemical Research Center (GRC), Graduate School of Science, University of Tokyo, Tokyo, 113-0033, Japan;5. Irkutsk State University, ul. Karla Marksa 1, Irkutsk, 664003, Russia;6. Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russia;1. State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China;2. College of Chemistry, Beijing Normal University, Beijing 100875, China;3. Graduate School of the Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | Compared to the difficult volatilization for germanium (IV) precursors, germanium (II) precursors usually have better volatilization but difficult to synthesize. A series of diamine germanium (II) precursors were synthesized, characterized and investigated by DFT calculations. These germanium (II) precursors were tested by TG experiments and showed excellent volatilization, which were suitable as a potential membrane material. Moreover, the Ge film was deposited on Si wafer directly and characterized by SEM. |
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