Geometrical and crystal structures,optical absorption and device characterization of N-(5-{[antipyrinyl-hydrazono]-cyanomethyl}-[1,3,4]thiadiazol-2-yl)-benzamide |
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| Affiliation: | 1. Basic Science Department, High Institute of Engineering and Technology, El-Arish, North Sinai, Egypt;2. Department of Physics, Faculty of Science at New Damietta, Damietta University, 34517 New Damietta, Egypt;3. Solid State Electronics Laboratory, Solid State Physics Department, Physics Division, National Research Centre, 33 El-Bohouth St., Dokki, Giza 12622, Egypt;1. Voronezh State University, Universitetskaya pl., 1, 394006 Voronezh, Russia;2. Ioffe Physical and Technical Institute, Polytekhnicheskaya, 26, 194021 St-Petersburg, Russia;1. School of Renewable Energy Technology, Naresuan University, Phitsanulok 65000, Thailand;2. Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand;3. Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand;4. Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand;1. Facultad de Química, Materiales, Universidad Autónoma de Querétaro, Querétaro 76010, México;2. Departamento de Física, CINVESTAV-IPN, Apdo. Postal 14-740, México D.F. 07360, México;3. Departamento de Ingeniería Eléctrica, Sección de Estado Sólido, CINVESTAV-IPN, Apdo. Postal 14-740, México D.F. 07360, México;4. Escuela Superior de Física y Matemáticas del IPN, México D.F. 07738, México |
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| Abstract: | The molecular structure of the N-(5-{antipyrinyl-hydrazono]-cyanomethyl}-1,3,4]thiadiazol-2-yl)-benzamide (ACTB) is optimized theoretically in which the energies of highest occupied molecular orbital and lowest unoccupied molecular orbital are calculated. ACTB crystalizes in triclinic structure with a space group, P2. ACTB thin films were prepared by using thermal evaporation technique onto quartz and n-Si single crystal substrates. The optical properties of the films are investigated in terms of the spectrophotometric measurements of the transmittance and reflectance. The current–voltage (I–V) characteristics of the fabricated In/ACTB/n-Si/Au diode are studied in temperature range 298–398 K. The device showed rectification behavior. At low forward voltage, the thermionic theory is applied for determining the ideality factor and barrier height as a function of temperature. The series resistance of the device is found to decrease with increasing temperature. At relatively high forward voltage, the space charge limited current dominated by exponential distribution of traps is found to be the operating mechanism in which the trapping parameters and charge carriers mobility are estimated. |
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| Keywords: | Optical band gap Heterojunction Conduction mechanisms Ideality factor Barrier height Series resistance |
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