Role of Schottky barrier height at source/drain contact for electrical improvement in high carrier concentration amorphous InGaZnO thin film transistors |
| |
| Affiliation: | 1. College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;2. Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea;3. Department of Electrical Engineering (SEES), CINVESTAV-IPN, Col. San Pedro Zacatenco, Mexico City 07360, Mexico;4. Department of Electronics and Communication Engineering, Sikkim Manipal Institute of Technology, Sikkim Manipal University, Sikkim 737136, India;1. Department of Nanoscale Semiconductor Engineering, Hanyang University, 17 Haengdang-dong, Seoungdong-ku, Seoul 133-791, Republic of Korea;2. Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seoungdong-ku, Seoul 133-791, Republic of Korea;1. State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, School of Microelectronics, Sun Yat-sen University, Guangzhou 510275, China;2. Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3 ga, Jung-gu, Seoul 100-715, Republic of Korea;3. SYSU-CMU Shunde International Joint Research Institute, Shunde, China;4. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan;5. Shenzhen China Star Optoelectronics Technology Co., Ltd., Guangming New District No. 9-2, Tangming Rd, Shenzhen 51813, China |
| |
| Abstract: | We report the fabrication of bottom-gate thin film transistors (TFTs) at various carrier concentrations of an amorphous InGaZnO (a-IGZO) active layer from ~1016 to ~1019 cm?3, which exceeds the limit of the concentration range for a conventional active layer in a TFT. Using the Schottky TFTs configuration yielded high TFT performance with saturation mobility (μsat), threshold voltage (VTH), and on off current ratio (ION/IOFF) of 16.1 cm2/V s, ?1.22 V, and 1.3×108, respectively, at the highest carrier concentration active layer of 1019 cm?3. Other carrier concentrations (<1019 cm?3) of IGZO resulted in a decrease of its work function and increase in activation energy, which changes the source/drain (S/D) contact with the active layer behavior from Schottky to quasi Ohmic, resulting in achieving conventional TFT. Hence, we successfully manipulate the barrier height between the active layer and the S/D contact by changing the carrier concentration of the active layer. Since the performance of this Schottky type TFT yielded favorable results, it is feasible to explore other high carrier concentration ternary and quaternary materials as active layers. |
| |
| Keywords: | Schottky barrier modification High-conductivity IGZO-TFT High mobility TFTs |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
