Synthesis and characterization of nanostructured magnetoresistive Ni doped ZnO films |
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| Affiliation: | 1. Centro de Investigación y Estudios Avanzados del IPN, Departamento de Ingeniería, Eléctrica, Sección de Electrónica del Estado Sólido (SEES), Ciudad de México, MX 07360, México;2. Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE), Puebla, PU 72840, México;3. Instituto Politécnico Nacional, Escuela Superior de Ingeniería Mecánica y Eléctrica (ESIME), México, MX 07738, México;1. Department of Electrical Engineering-SEES, CINVESTAV-IPN, Zacatenco, D. F., C.P 07360, Mexico;2. Institute of Molecules and Materials, UMR-CNRS 6283, Universite du Maine, Avenue O. Messiaen, F-72085 Le Mans, France;3. Department of Physics, Colorado School of Mines, Golden, CO 80401, United States;4. Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, CO 80401, United States;1. L.V. Pysarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine, Kyiv, Ukraine;2. V.E. Lashkarev Institute of Semiconductor Physics of National Academy of Sciences of Ukraine, Kyiv, Ukraine;3. Semiconductor Physics, Technische Universität Chemnitz, Chemnitz, Germany;4. Kyiv National Taras Shevchenko University, Faculty of Chemistry, Kyiv, Ukraine;1. Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Korea;2. National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry, Sungkyunkwan University, 2066 Seoburo, Jangan-Gu, Suwon, Gyeonggi-Do 440-746, Korea;3. Department of Electrical Engineering (SEES), CINVESTAV-IPN, Avenida IPN 2508, San Pedro Zacatenco, Mexico D.F., Mexico;1. Centro de Investigación en Biotecnología Aplicada, Instituto Politécnico Nacional, Ex–Hacienda de San Juan Molino. Km. 1.5. Tepetitla, Tlaxcala 90700, México;2. Universidad del Valle de Puebla, 3 Sur No. 5759. Col. El Cerrito. Puebla, Puebla 72440, México;3. Departamento de Ingeniería Eléctrica, SEES, CINVESTAV-IPN, Apartado Postal 14-740. México, D. F. 07000, México;4. Centro de Investigación en Dispositivos Semiconductores, Benemérita Universidad Autónoma de Puebla, 14 Sur y Av. San Claudio Edif. 103C, Ciudad Universitaria, Col. San Manuel, Puebla, Puebla 72570, México;5. Unidad Profesional Interdisciplinaria de Biotecnología del Instituto Politécnico Nacional, Avenida Acueducto S/N, Col. Barrio la Laguna, Ticomán, México, D.F. 07340, México;1. Instituto Politécnico Nacional, Sección de Estudios de Posgrado e Investigación, SEPI – ESIME – IPN, Av. Instituto Politécnico Nacional S/N, Col. Lindavista, México D.F. 07738, Mexico;2. Instituto Politécnico Nacional, SEPI – ESFM – IPN, Av. Instituto Politécnico Nacional S/N, Col. Lindavista, México D.F. 07738, Mexico;3. Instituto Politécnico Nacional, ESIME – IPN, Av. Instituto Politécnico Nacional S/N, Col. Lindavista, México D.F. 07738, Mexico;4. CIICAp Centro de Investigación en Ingeniería y Ciencias Aplicadas, Av. Universidad No. 1001, Col Chamilpa, Cuernavaca, Morelos, México C.P. 62209, Mexico;5. V. Lashkaryov Institute of Semiconductor Physics at NASU, Kiev, Ukraine;6. Instituto Politécnico Nacional, ESIME – Ticomán, México D.F. 07340, Mexico;1. Facultad de Química, Materiales, Universidad Autónoma de Querétaro, Querétaro 76010, México;2. Centro de Ivestigación en Materiales Avanzados S.C. (CIMAV), Miguel de Cervantes 120, 31109 Chihuahua, CHIH, Mexico;3. Instituto de Energías Renovables, UNAM, 62580 Temixco, Morelos, México |
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| Abstract: | We report a method to produce magnetic nanostructured semiconductor films based in ZnO doped with Nickel to control their magnetic properties. The method is based on a combined diffusion–oxidation process within a controlled atmosphere chamber to produce a uniform distribution of Ni ions in the ZnO films (ZnO:Ni). The synthesis of ZnO:Ni films is reported as well as the magnetoresistive characteristics, the used method yields films with reproducible and homogeneous properties. The films were also characterized structurally by X-Ray Diffraction (XRD) and Raman spectroscopy, and by Hall–van der Pauw measurements. The XRD measurements confirm the nanocrystalline films character. The films resulted of n-type conductivity with electron concentrations of ~1020 cm−3 in average and carrier mobilities of 5 cm2/V s. The Magnetoresistance (MR) behavior of the films at 300 K shows negative changes of ΔR~0.5% in accordance with the usual literature reports on samples produced by other methods. |
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| Keywords: | ZnO Magnetic semiconductors Magnetoresistance Spintronics |
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