Optical and electrical measurement of FeSe2 thin films obtained at low temperature |
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| Affiliation: | 1. UPDS, Faculté des Sciences de Tunis, Universite El Manar, Tunis, Tunisia;2. Department of Physics, College of Applied Sciences, Umm AlQura University, P.O. Box 7296, Makkah 21955, Saudi Arabia;1. Institute of Polymeric Materials, Sahand University of Technology, Tabriz, Iran;2. Faculty of Polymer Engineering, Sahand University of Technology, Tabriz, Iran;1. Department of Physics, University College of Science, Osmania University, Saifabad, Hyderabad 500004, India;2. Department of Physics, Osmania University, Hyderabad 500007, India;3. School of Physics, Eternal University, Baru Sahib 173101, Himachal Pradesh, India;1. Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, Tunis-El Manar University, 2092, Tunisia;2. King Khalid University, Faculty of Science, Physics, Department, P.O. Box 9004, Abha 61413, Saudi Arabia;3. Laboratoire de Physique des Rayonnements, Département de Physique, Faculté des Sciences, Université Badji Mokhtar, Annaba 23000, Algeria;1. Department of Chemistry, Quaid-i-Azam University, 45320 Islamabad, Pakistan;2. Department of Physics, University of Sargodha, Punjab, Pakistan |
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| Abstract: | FeSe2 thin films were prepared at low temperature by thermal annealing at 350 °C during 6 h of sequentially evaporated iron and selenium films under selenium atmosphere. The structural, optical and electrical characteristics were investigated. The roughness of films (~76 nm) was confirmed by AFM images. Moreover, optical band gap of FeSe2, which was evaluated as nearly 1.11 eV and confirmed by the electrical study which yielded a value in the order of 1.08 eV. The electrical conductivity, conduction mechanism, dielectric properties and relaxation model of theses thin films were studied using impedance spectroscopy technique in the frequency range 5 Hz–13 MHz under various temperatures (180–300 °C). Besides, complex impedance and AC conductivity have been investigated on the basis of frequency and temperature dependence. |
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| Keywords: | Thin films Optical properties Electrical properties. |
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