Carbon ions irradiation induced modifications in structural and electrical resistivity characteristics of ZrN thin films |
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| Affiliation: | 1. Department of Metallurgy and Materials Engineering, Pakistan Institute of Engineering & Applied Sciences, Islamabad, Pakistan;2. National Centre for Physics (NCP), Islamabad, Pakistan;3. Department of Physics, Islamia College University, Peshawar, Pakistan;4. UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk ridge, P.O. Box 392, Pretoria, South Africa;5. Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, P.O. Box 722, Western Cape Province, South Africa;1. Basic Science Department, High Institute of Engineering and Technology, El-Arish, North Sinai, Egypt;2. Department of Physics, Faculty of Science at New Damietta, Damietta University, 34517 New Damietta, Egypt;3. Solid State Electronics Laboratory, Solid State Physics Department, Physics Division, National Research Centre, 33 El-Bohouth St., Dokki, Giza 12622, Egypt;1. Lesya Ukrainka Eastern European National University, 43025 Lutsk, Ukraine;2. Semiconductor Physics Department and Institute of Applied Research, Vilnius University, Saul?tekio al. 9, bldg.3, LT-10222 Vilnius, Lithuania;1. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan;2. Gigastorage Corporation, Hsinchu, Taiwan;3. Department of Materials Engineering, Ming Chi University of Technology, Taiwan;4. Center for Plasma and Thin Films Technologies, Ming Chi University of Technology, Taiwan;5. Department of Mechanical Engineering, Chang Gung University, Taoyuan, Taiwan;6. Plastic and Reconstructive Surgery, Craniofacial Research Center, Chang Gung Memorial Hospital, Taoyuan, Taiwan |
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| Abstract: | Zirconium nitride (ZrN) thin films are irradiated with 800 keV energetic carbon (C) ions in a 5UDH-Pelletron accelerator and the ions irradiation induced effects are investigated. The films are irradiated at various C ions fluences, ranging from 1013 to 1015 ions/cm2. The scanning electron microscopy study of the films indicates the development of zirconium (Zr) nanoparticles at ions irradiated region. X-ray diffraction (XRD) patterns of C ions irradiated films also show the formation of (100) and (002) oriented nanocrystalline metallic Zr phases. The irradiated films spectra depict a shift in ZrN peaks towards higher 2θ values, exhibiting that C ions bombardment induces compressive stress in the irradiated films. The appearance of C related peaks in Fourier transform infrared (FTIR) spectra confirms the incorporation of C atoms into ZrN film. Compressive stress has been calculated from the IR peak shift which indicates that higher ion dose (≥5×1014 ions/cm2) produce lower compressive stress relative to the lower ions fluences. Effect of ion dose on the film resistivity is also reported. |
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| Keywords: | Carbon ions irradiation ZrN Cathodic arc ion XRD Electrical resistivity |
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