High-voltage and low specific on-resistance power UMOSFET using P and N type columns |
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| Affiliation: | 1. Electrical and Computer Engineering Department, Semnan University, Semnan, Iran;2. Electrical and Computer Engineering Department, University of Tehran, Tehran, Iran;1. Department of Physics, Faculty of Sciences, Gazi University, Ankara, Turkey;2. Department of Opticianry, Vocational school of Medical Sciences, Turgut Özal University, Ankara, Turkey;3. Department of Chemistry, Chemistry Education Department, Gazi University, Ankara, Turkey;1. School of Renewable Energy Technology, Naresuan University, Phitsanulok 65000, Thailand;2. Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand;3. Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand;4. Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand;1. Basic Science Department, High Institute of Engineering and Technology, El-Arish, North Sinai, Egypt;2. Department of Physics, Faculty of Science at New Damietta, Damietta University, 34517 New Damietta, Egypt;3. Solid State Electronics Laboratory, Solid State Physics Department, Physics Division, National Research Centre, 33 El-Bohouth St., Dokki, Giza 12622, Egypt |
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| Abstract: | For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (Ron,sp) of 2 mΩ cm2, which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively. |
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| Keywords: | UMOSFET Power transistor 4H–SiC Specific on-resistance Breakdown voltage Simulation |
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