Formation and characterization of porous silicon films obtained by catalyzed vapor-chemical etching |
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| Affiliation: | 1. Programa de Doctorado en Nanociencias y Nanotecnología, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Av. Instituto Politécnico Nacional, No. 2508, México D.F. C.P. 07360, Mexico;2. Departamento de Ingeniería Eléctrica, Sección de Electrónica del Estado Sólido, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Av. Instituto Politécnico Nacional, No. 2508, México D.F. C.P. 07360, Mexico;1. College of Life Science, Jiangxi Normal University, Nanchang, Jiangxi 330022, China;2. College of Chemistry and Chemical Engineering, Central South University, Changsha, Hunan 410083, China;3. College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang, Hunan 414006, China;1. Department of Physics, University of Calcutta, 92, Acharya Prafulla Chandra Road, Kolkata 700009, India;2. Department of Physics, Bose Institute, 93/1, Acharya Prafulla Chandra Road, Kolkata 700009, India;1. State Key Discipline Laboratory of Wide BandGap Semiconductor Technology, School of Microelectronics, Xidian University, Xi''an 710071, PR China;2. School of Physics and Optoelectronic Engineering, Xidian University, Xi''an 710071, PR China;3. Faculty of Science, University of Paris-Sud, Paris 91400, France;4. Faculty of Information Engineering & Automation, Kunming University of Science and Technology, Kunming 650051, PR China;1. Laboratory of physical materials – University of Laghouat, BP 37G, Laghouat, Algeria;2. Laboratoire de Matériaux Semi Conducteurs et Métalliques «LMSM», Université de Biskra, Algeria;3. Laboratoire de Physique des Rayonnements, Université Badji Mokhtar Annaba, Algeria;1. Unité de physique des dispositifs à semi-conducteurs, Tunis EL MANAR University, 2092 Tunis, Tunisia;2. Faculté des Sciences de Bizerte, Université de Carthage, Zarzouna 7021, Tunisia;3. Physics Department, Faculty of Arts and Sciences, Marmara University, Göztepe, Istanbul 34722, Turkey |
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| Abstract: | Porous silicon films obtained by the metal-assisted vapor-chemical etching technique have been characterized. For the film formation, epitaxial (100) N/P+, 1–5 Ω cm monocrystalline silicon wafers were used. The vapors of an alcoholic solution of H2O2/HF were drawn towards the silicon surface, which was previously covered with a thin layer of gold (~8 nm) for the catalytic etching. For the optical and morphological characterization of porous films, Raman spectroscopy, Ellipsometry, FTIR spectroscopy and SEM images were used. The films thickness kept a linear relationship with etching time. A porosity gradient from the surface towards the interface (65% to 12%) was observed in the films. A large amount of Si–H bonds as related to O–Si–O bonds were observed and the pore size depends on the HF concentration. Irregular morphology was found in films formed with 50% HF. |
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| Keywords: | Porous silicon Chemical etching Raman spectroscopy Ellipsometry SEM |
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