Electrodeposited and characterization of Ag–Sn–S semiconductor thin films |
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| Affiliation: | 1. Laboratory of Physical Alloys (LPA), College of Science, University of Dammam, Saudi Arabia;2. Laboratoire Photovoltaïque, Centre de Recherches et des Technologies de l''Energie Technopole borj cedria, Bp 95, Hammamm Lif 2050, Tunisia;1. Department of Physics, University College of Science, Osmania University, Saifabad, Hyderabad 500004, India;2. Department of Physics, Osmania University, Hyderabad 500007, India;3. School of Physics, Eternal University, Baru Sahib 173101, Himachal Pradesh, India;1. Université Tunis el Manar, Laboratoire de nanomatériaux et des systèmes pour les énergies renouvelables, Centre de Recherches et des Technologies de l''Energie, BP. 95, Hammam Lif 2050, Tunisia;2. LOMA, Laboratoire Ondes et Matière d''Aquitaine Université de Bordeaux, 351, cours de la libération, 33405 Talence Cedex, France;3. Unité de physique des dispositifs à semi-conducteurs, Faculté des sciences de Tunis, Université Tunis El Manar, 2092 Tunis, Tunisia;1. School of Materials Science and Engineering, Jiangsu Collaborative Innovation Center for Photovoltaic Science and Engineering, Jiangsu Province Cultivation base for State Key Laboratory of Photovoltaic Science and Technology, Changzhou University, Changzhou 213164, China;2. Micro/Nano Science and Technology Center, Jiangsu University, Zhenjiang 212013, China;1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, People''s Republic of China;2. College of Instrumentation & Electrical Engineering, Jilin University, 938 Ximinzhu Street, Changchun, 130061, People''s Republic of China;3. School of Electronic Engineering, South China Agricultural University, Guangzhou, 510642, People''s Republic of China |
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| Abstract: | Thin film of silver tin sulfides (Ag–Sn–S) has been deposited on indium tin oxide coated glass (ITO) substrates using potentiostatic cathodic electrodeposition technique. New procedure for the growth of Ag–Sn–S film is presented. An electrolyte solution containing Silver Nitrate (AgNO3), Tin(II) Chloride (SnCl2) and Sodium Thiosulfate (Na2S2O3)in acidic solution (pH ~2) and at temperature of the bath 55 °C were used for the growth of Ag–Sn–S thin film. Prior to the deposition, a cyclic voltammetry technique was performed in binary (Ag–S, Sn–S) and ternary (Ag–Sn–S) systems. This study was carried out to examine the behavior of electroactive species at the electrode surface. Based on these results, the cathodic applied potential was fixed at ?1000 mV versus Ag/AgCl to obtain a uniform and good adhesion of ternary thin film. After that, structural, morphological and optical performances of films have been investigated. The X-ray diffraction patterns of the samples demonstrate the presence of the orthorhombic phase of Ag8SnS6 at applied potential of ?1000 mV versus Ag/AgCl. Based on the scanning electron microscopy (SEM), it was found that the surface morphology and grain size were strongly influenced by the presence of Sn and/or Ag in the electrolyte bath. The band gaps of binaries and ternary compound are evaluated from optical absorption measurements. Band gap of Ag8SnS6 determined from transmittance spectra is in the range 1.56 eV. Flat-band potential and free carrier concentration have been determined from Mott–Schottky plot and are estimated to be around 0.18 V and 2.21×1014 cm?3 respectively. The photoelectrochemical test of Ag8SnS6 was studied and the experimental observations are discussed in detail. |
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| Keywords: | Ag–Sn–S Electrodeposition technique Cyclic voltammetry Thin films |
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